Optical control of integer and fractional Chern insulators

AI Summary4 min read

TL;DR

Researchers demonstrate optical control of Chern and fractional Chern insulator states in twisted MoTe2 bilayer using circularly polarized light. They achieve on-demand ferromagnetic polarization via optical training and direct switching, enabling dynamic manipulation of topological domains.

Key Takeaways

  • Optical pumping with circularly polarized light allows precise control of ferromagnetic polarization in twisted MoTe2, influencing Chern insulator states.
  • Two methods are demonstrated: optical training at low power for on-demand preparation and direct switching at higher power for rapid manipulation.
  • The control is most effective near integer and fractional Chern insulator states due to enhanced valley polarization of optically pumped holes.
  • Spatially resolved measurements show optical writing of ferromagnetic domains, enabling programmable patterning of topological states.
  • This work has potential applications in topological spintronics, quantum memories, and creation of exotic edge states.

Tags

FerromagnetismTopological matterTwo-dimensional materialsScienceHumanities and Social Sciencesmultidisciplinary

Abstract

Optical control of topology, particularly in the presence of electron correlations, is an interesting topic with broad scientific and technological impact1,2,3,4. Twisted MoTe2 bilayer (tMoTe2) is a zero-field fractional Chern insulator (FCI)5,6,7,8,9,10, exhibiting the fractionally quantized anomalous Hall effect11,12,13,14. As the chirality of the edge states and sign of the Chern number are determined by the underlying ferromagnetic polarization15,16, manipulation of ferromagnetism would realize control of the Chern insulator (CI)/FCI states. Here we demonstrate control of ferromagnetic polarization, and thus the CI and FCI states, by circularly polarized optical pumping in tMoTe2. At low excitation power, we achieve on-demand preparation of ferromagnetic polarization by optical training, that is, electrically tuning the system from non-ferromagnetic to desirable ferromagnetic states under helicity-selective optical pumping. With increased excitation power, we further realize direct optical switching of ferromagnetic polarization at a temperature far below the Curie temperature17,18. Both optical training and direct switching are most effective near CI and FCI states, which we attribute to a gap-enhanced valley polarization of optically pumped holes. The magnetization can be dynamically switched by modulating the helicity of optical excitation. Spatially resolved measurements further demonstrate optical writing of ferromagnetic, and thus CI (or FCI) domains. Our work realizes precise optical control of a topological quantum many-body system with potential applications in topological spintronics, quantum memories and creation of exotic edge states by programmable patterning of integer and fractionally quantized anomalous Hall domains4,19.

Access Nature and 54 other Nature Portfolio journals

Get Nature+, our best-value online-access subscription

$32.99 / 30 days

cancel any time

Subscribe to this journal

Receive 51 print issues and online access

$199.00 per year

only $3.90 per issue

Buy this article

  • Purchase on SpringerLink
  • Instant access to the full article PDF.

USD 39.95

Prices may be subject to local taxes which are calculated during checkout

Fig. 1: Optical training of moiré Chern ferromagnetism.
Fig. 2: Doping, pump power and electric-field-dependent optical control.
Fig. 3: Direct optical switching of moiré Chern ferromagnetism.
Fig. 4: Dynamic optical manipulation of the −2/3 FCI state.

Similar content being viewed by others

Data availability

Source data are provided with this paper.

References

  1. Oka, T. & Aoki, H. Photovoltaic Hall effect in graphene. Phys. Rev. B 79, 081406 (2009).

    Article  ADS  Google Scholar 

  2. Kitagawa, T., Oka, T., Brataas, A., Fu, L. & Demler, E. Transport properties of nonequilibrium systems under the application of light: photoinduced quantum Hall insulators without Landau levels. Phys. Rev. B 84, 235108 (2011).

    Article  ADS 

Visit Website